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| HFA80FA120P Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 80 A FEATURES * Fast recovery time characteristic 1 4 * Electrically isolated base plate * Large creepage distance between terminal * Simplified mechanical designs, rapid assembly * UL pending * Totally lead (Pb)-free * Designed and qualified for industrial level RoHS COMPLIANT SOT-227 2 3 DESCRIPTION/APPLICATIONS PRODUCT SUMMARY VR VF (typical) trr (typical) IF(DC) at TC 1200 V 2.6 V 25 ns 40 A at 78 C The dual diode series configuration (HFA80FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation RMS isolation voltage Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD VISOL TJ, TStg TC = 78 C TJ = 25 C Rated VR, square wave, 20 kHz, TC = 60 C TC = 25 C TC = 100 C Any terminal to case, t = 1 min TEST CONDITIONS MAX. 1200 40 400 72 178 71 2500 - 55 to + 150 W V C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 A IF = 25 A Forward voltage VFM IF = 40 A IF = 80 A, TJ = 125 C Reverse leakage current Junction capacitance IRM CT VR = VR rated TJ = 125 C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 1200 TYP. 2.6 2.9 3.4 2.0 0.5 43 MAX. 3.0 3.3 2 A mA pF V UNITS Document Number: 94075 Revision: 28-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 HFA80FA120P Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 80 A TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V Reverse recovery time trr TJ = 25 C TJ = 125 C Peak recovery current IRRM Qrr TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C IF = 40 A dIF/dt = - 200 A/s VR = 200 V MIN. TYP. 25 52 110 5.9 10.8 160 630 MAX. A ns UNITS DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 C unless otherwise specified) PARAMETER SYMBOL Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque SYMBOL RthJC RthCS Flat, greased and surface TEST CONDITIONS MIN. TYP. 0.05 30 1.3 MAX. 0.7 0.35 g Nm C/W UNITS www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94075 Revision: 28-Aug-08 HFA80FA120P HEXFRED(R) Ultrafast Soft Recovery Diode, 80 A 100 10 Vishay High Power Products IR - Reverse Current (A) TJ = 150 C 1 IF - Instantaneous Forward Current (A) TJ = 125 C 0.1 10 0.01 TJ = 150 C TJ = 125 C TJ = 25 C 0.001 TJ = 25 C 1 1.0 0.0001 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 1200 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) TJ = 25 C 100 10 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (C/W) 1 0.1 PDM 0.01 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t1 t2 0.001 Single pulse (thermal resistance) 0.0001 0.00001 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 0.0001 0.001 0.01 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94075 Revision: 28-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 HFA80FA120P Vishay High Power Products 160 HEXFRED(R) Ultrafast Soft Recovery Diode, 80 A 140 120 100 Allowable Case Temperature (C) 140 120 100 IF = 40 A, TJ = 125 C IF = 20 A, TJ = 125 C DC 80 60 40 20 trr (ns) 80 60 40 Square wave (D = 0.50) IF = 40 A, TJ = 25 C IF = 20 A, TJ = 25 C See note (1) 0 0 10 20 30 40 50 60 70 20 100 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current dIF/dt (A/s) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 200 180 1800 RMS limit Average Power Loss (W) 1600 1400 160 140 120 100 80 60 40 20 0 DC 1200 IF = 40 A, TJ = 125 C IF = 20 A, TJ = 125 C Qrr (nC) 1000 800 600 400 200 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 0 10 20 30 40 50 60 IF = 40 A, TJ = 25 C IF = 20 A, TJ = 25 C 0 100 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/s) Fig. 8 - Typical Stored Charge vs. dIF/dt (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94075 Revision: 28-Aug-08 HFA80FA120P HEXFRED(R) Ultrafast Soft Recovery Diode, 80 A VR = 200 V Vishay High Power Products 0.01 L = 70 H D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94075 Revision: 28-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 HFA80FA120P Vishay High Power Products ORDERING INFORMATION TABLE HEXFRED(R) Ultrafast Soft Recovery Diode, 80 A Device code HF 1 1 2 3 4 5 6 - A 2 80 3 FA 4 120 5 P 6 HEXFRED(R) family Process designator (A = Electron irradiated) Average current (80 = 80 A) Package outline (FA = SOT-227) Voltage rating (120 = 1200 V) P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Packaging information http://www.vishay.com/doc?95036 http://www.vishay.com/doc?95037 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94075 Revision: 28-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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